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Si3981DV
Vishay Siliconix
Dual P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
? TrenchFET ? Power MOSFET
V DS (V)
- 20
R DS(on) ( ? )
0.185 at V GS = - 4.5 V
0.260 at V GS = - 2.5 V
0.385 at V GS = - 1.8 V
I D (A)
- 1.9
- 1.6
- 0.7
? Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
? Battery Switch for Portable Devices
TSOP-6
Top View
? Computers
- Bus Switch
- Load Switch
3 mm
G 1
S 2
G 2
1
2
3
6
5
4
D 1
S 1
D 2
G 1
S 1
G 2
S 2
2.85 mm
Ordering Information:
Si3981DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code:
MCxxx
D 1
P-Channel MOSFET
D 2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
- 20
±8
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
- 1.9
- 1.5
-8
- 1.6
- 1.3
A
Continuous Source Current (Diode Conduction) a
I S
-1
- 0.72
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
1.08
0.69
- 55 to 150
0.80
0.51
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ? 5s
Steady State
Steady State
R thJA
R thJF
97
132
78
115
155
95
°C/W
Note:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 72502
S13-0631-Rev. E, 25-Mar-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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